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| inchange semiconductor isc product specification isc silicon npn power transistor MJE3055 description collector-emitter breakdown voltage- : v (br)ceo = 60v(min) high dc current gain- : h fe = 20-100@i c = 4a complement to type mje2955 applications designed for use in general-purpose amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i b b base current-continuous 6 a p c collector power dissipation @ t c =25 90 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.39 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJE3055 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 200ma; i b = 0 60 v v ce (sat)-1 collector-emitter saturation voltage i c = 4a; i b = 0.4a b 1.1 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a; i b = 3.3a 8.0 v v be (on) base-emitter on voltage i c = 4a ; v ce = 4v 1.8 v i cex collector cutoff current v ce =70v;v eb( off ) =-1.5v v ce =70v;v eb( off ) =-1.5v;t c = 150 1.0 5.0 ma i ceo collector cutoff current v ce = 30v; i b = 0 b 0.7 ma i cbo collector cutoff current v cb = 70v; i e = 0 v cb = 70v; i e = 0; t c = 150 1.0 10 ma i ebo emitter cutoff current v eb = 5v; i c = 0 5.0 ma h fe-1 dc current gain i c = 4a ; v ce = 4v 20 100 h fe-2 dc current gain i c = 10a ; v ce = 4v 5 f t current gain-bandwidth product i c = 0.5a; v ce = 10v; f= 500khz 2.0 mhz isc website www.iscsemi.cn 2 |
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